Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100protect unhbox voidb@x penalty @M {}keV electron beam lithography
نویسندگان
چکیده
We investigated the fabrication of dense, high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures by 100 keV electron beam lithography. The samples were developed using a high contrast developer and supercritically dried in carbon dioxide. Dense gratings with line widths down to 25 nm were patterned in 500 nm-thick resist layers and semi-dense gratings with line widths down to 10 nm (40 nm pitch) were patterned in 250 nm-thick resist layers. The dense HSQ nanostructures were used as molds for gold electrodeposition, and the semi-dense HSQ gratings were iridium-coated by atomic layer deposition. We used these methods to produce Fresnel zone plates with extreme aspect ratio for scanning transmission x-ray microscopy that showed excellent performance at 1.0 keV photon energy. (Some figures in this article are in colour only in the electronic version)
منابع مشابه
High resolution HSQ nanopillar arrays with low energy electron beam lithography
0167-9317/$ see front matter 2013 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2013.03.055 ⇑ Corresponding author at: LAAS, CNRS, 7 avenue Toulouse, France. Tel.: +33 (0) 5 61 33 79 84; fax: +3 E-mail addresses: [email protected] (Y. Guerfi), glarri Electron beam lithography (EBL) is commonly used for the fabrication of nanostructures by top-down approach with precise control of size, shape, a...
متن کاملSub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane HSQ and calixarene were the only two reported negative resists that could approach sub-10-nm half-pitch resolution for electron-beam lithography. Here, the aut...
متن کاملDirect e-beam writing of high aspect ratio nanostructures in PMMA: A tool for diffractive X-ray optics fabrication
We present a fast and reliable fabrication method of dense, periodic and high aspect ratio PMMA and metallic nanostructures. Biased lines are directly exposed by a 100 keV electron beam in thick layers of polymethyl-methacrylate (PMMA) resist to produce polymer mold which is later used to grow Au high aspect ratio structures by electroplating. Dense PMMA and Au nanostructures with aspect ratios...
متن کاملSub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist
We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...
متن کاملPolymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires
A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy postprocess removal of the mask without damage to the magnetic quality of the film. Co60Fe20B20 a...
متن کامل